| PART |
Description |
Maker |
| TISP61089AS |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc.
Power Innovations Limited
Power Innovations Ltd
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
TELECOM, SURGE PROTECTION CIRCUIT, PDIP8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
|
BOURNS INC
BOURNS[Bourns Electronic Solutions]
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX14H4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| MMC4025 MMC4001 MMC4002 MMC4000 |
Quad 2-input NOR gate
Dual 4-input NOR gate
Dual 3-input NOR gate plus inverter
Triple 3-input NOR gate
NOR GATES COMPLEMENTARY MOS INTEGRATED CIRCUITS
|
Microelectronica
Micro Electronics
|
| SL74HC123N SL74HC123D SL74HC123 HC123 |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:70A; Forward Voltage Max, VF:1.1V; Package/Case:DO-15 双Retriggerable单稳态触发器
Dual Retriggerable Monostable Multivibrator
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
